SUBPICOSECOND CARRIER LIFETIMES IN ARSENIC-ION-IMPLANTED GAAS

doi:10.1063/1.115248

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	GANIKHANOV, F	en_US
dc.contributor.author	LIN, GR	en_US
dc.contributor.author	CHEN, WC	en_US
dc.contributor.author	CHANG, CS	en_US
dc.contributor.author	PAN, CL	en_US
dc.date.accessioned	2014-12-08T15:03:00Z	-
dc.date.available	2014-12-08T15:03:00Z	-
dc.date.issued	1995-12-04	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.115248	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1604	-
dc.description.abstract	We have investigated photoexcited carrier lifetimes in arsenic-ion-implanted semi-insulating GaAs by time-resolved reflectivity measurements. Subpicosecond carrier lifetimes (220 to 550 fs) which do not exhibit apparent dosage dependence for samples bombarded with 200 keV arsenic ions at increasing dosages in the range of 10(12) and 10(16) ions/cm(2) are reported. The shortest carrier lifetime was observed for the sample irradiated at 10(13) ions/cm(-2). These are the shortest lifetimes ever observed for ion-damaged GaAs and comparable to those of low-temperature molecular beam epitaxially grown GaAs, which is also nonstoichiometric with excess-arsenic-related, deep-level defects. (C) 1995 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	SUBPICOSECOND CARRIER LIFETIMES IN ARSENIC-ION-IMPLANTED GAAS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.115248	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	67	en_US
dc.citation.issue	23	en_US
dc.citation.spage	3465	en_US
dc.citation.epage	3467	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:A1995TH28700032	-
dc.citation.woscount	57	-
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