RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

Abstract

The radiation effect on the n-channel polycrystalline silicon (polysilicon) thin-him transistors has been investigated. It is found that for an unhydrogenated device, the irradiation of Co-60 With a total dose of 1 Mrads caused a negative threshold-voltage (V-th) shift and a slight subthreshold-swing (S) degradation, while for a hydrogenated n-channel device, the same irradiation results in a positive V-th Shift and a serious S degradation. It is also found that the radiation hardness of the hydrogenated devices can be improved somewhat by a simple irradiation-then-hydrogenation treatment. (C) 1995 American Institute of Physics.