標題: RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
作者: YANG, CK
LEE, CL
LEI, TF
CHERN, HN
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 4-Dec-1995
摘要: The radiation effect on the n-channel polycrystalline silicon (polysilicon) thin-him transistors has been investigated. It is found that for an unhydrogenated device, the irradiation of Co-60 With a total dose of 1 Mrads caused a negative threshold-voltage (V-th) shift and a slight subthreshold-swing (S) degradation, while for a hydrogenated n-channel device, the same irradiation results in a positive V-th Shift and a serious S degradation. It is also found that the radiation hardness of the hydrogenated devices can be improved somewhat by a simple irradiation-then-hydrogenation treatment. (C) 1995 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.115252
http://hdl.handle.net/11536/1605
ISSN: 0003-6951
DOI: 10.1063/1.115252
期刊: APPLIED PHYSICS LETTERS
Volume: 67
Issue: 23
起始頁: 3477
結束頁: 3479
Appears in Collections:Articles