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dc.contributor.authorHuang, Feng-Wenen_US
dc.contributor.authorSheu, Jinn-Kongen_US
dc.contributor.authorTu, Shang-Juen_US
dc.contributor.authorChen, Po-Chengen_US
dc.contributor.authorYeh, Yu-Hsiangen_US
dc.contributor.authorLee, Ming-Lunen_US
dc.contributor.authorLai, Wei-Chihen_US
dc.contributor.authorTsai, Wen-Cheen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.date.accessioned2014-12-08T15:22:48Z-
dc.date.available2014-12-08T15:22:48Z-
dc.date.issued2012-04-01en_US
dc.identifier.issn2159-3930en_US
dc.identifier.urihttp://hdl.handle.net/11536/16102-
dc.description.abstractThe memory effect and redistribution of manganese (Mn) into subsequently regrown GaN-based epitaxial layers by metalorganic chemical vapor deposition were revealed. Low-temperature up-converted photoluminescence (UPL) and the secondary ion mass spectrometry were performed on GaN-based epitaxial samples with and without Mn doping to study the effect of residual Mn on optical property. UPL emission, which originated from residual Mn doping in regrown InGaN quantum wells (QWs) because of the memory effect of the reactor, could be eliminated in an air-exposed and H-2-baking manner prior to the regrowth of the QWs. Considerable residual Mn background level and slow decay rate of Mn concentration tail were also observed in the regrown epitaxial layers, which could be attributed to the memory effect or surface segregation and diffusion from the Mn-doped underlying layer during regrowth in the Mn-free reactor. (C) 2012 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleOptical properties of Mn in regrown GaN-based epitaxial layersen_US
dc.typeArticleen_US
dc.identifier.journalOPTICAL MATERIALS EXPRESSen_US
dc.citation.volume2en_US
dc.citation.issue4en_US
dc.citation.epage469en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000302957100014-
dc.citation.woscount2-
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