標題: Effect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin films
作者: Huang, S. Y.
Lin, H. L.
Chao, C. G.
Liu, T. F.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Metal-induced lateral crystallization;Nickel;Amorphous silicon;Polycrystalline silicon;Glass substrate;Secondary ion mass spectroscopy;Raman spectroscopy
公開日期: 31-一月-2012
摘要: The present study describes a method enabling the metal-induced lateral crystallization (MILC) of amorphous silicon (a-Si) films. Glass substrates coated with a-Si films were contacted with ground nickel sheets under compressive stresses ranging from 3.7 to 265.8 MPa at 550 degrees C for 1 h. Subsequently, the nickel sheet and stress were removed and the specimens were annealed at 550 degrees C for 1 to 4 h. The experimental results indicate that the extent of MILC decreased when the preliminary compressive stress was increased, while all specimens exhibited the same rate of lateral crystallization during annealing. The present study indicates that, by applying an appropriate compressive stress (similar to 4 MPa), an effective method to reduce the residual Ni content in polycrystalline silicon (poly-Si) can be obtained. (C) 2011 Published by Elsevier B.V.
URI: http://hdl.handle.net/11536/16151
ISSN: 0040-6090
期刊: THIN SOLID FILMS
Volume: 520
Issue: 7
結束頁: 2984
顯示於類別:期刊論文


文件中的檔案:

  1. 000301085100102.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。