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dc.contributor.authorHuang, S. Y.en_US
dc.contributor.authorLin, H. L.en_US
dc.contributor.authorChao, C. G.en_US
dc.contributor.authorLiu, T. F.en_US
dc.date.accessioned2014-12-08T15:22:54Z-
dc.date.available2014-12-08T15:22:54Z-
dc.date.issued2012-01-31en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/11536/16151-
dc.description.abstractThe present study describes a method enabling the metal-induced lateral crystallization (MILC) of amorphous silicon (a-Si) films. Glass substrates coated with a-Si films were contacted with ground nickel sheets under compressive stresses ranging from 3.7 to 265.8 MPa at 550 degrees C for 1 h. Subsequently, the nickel sheet and stress were removed and the specimens were annealed at 550 degrees C for 1 to 4 h. The experimental results indicate that the extent of MILC decreased when the preliminary compressive stress was increased, while all specimens exhibited the same rate of lateral crystallization during annealing. The present study indicates that, by applying an appropriate compressive stress (similar to 4 MPa), an effective method to reduce the residual Ni content in polycrystalline silicon (poly-Si) can be obtained. (C) 2011 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectMetal-induced lateral crystallizationen_US
dc.subjectNickelen_US
dc.subjectAmorphous siliconen_US
dc.subjectPolycrystalline siliconen_US
dc.subjectGlass substrateen_US
dc.subjectSecondary ion mass spectroscopyen_US
dc.subjectRaman spectroscopyen_US
dc.titleEffect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin filmsen_US
dc.typeArticleen_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume520en_US
dc.citation.issue7en_US
dc.citation.epage2984en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000301085100102-
dc.citation.woscount0-
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