完整後設資料紀錄
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dc.contributor.authorLeu, Jihperngen_US
dc.contributor.authorChang, Chin-Chengen_US
dc.contributor.authorChen, Alexanderen_US
dc.contributor.authorLin, Mao-Hsingen_US
dc.contributor.authorHuang, Kun-Fengen_US
dc.date.accessioned2014-12-08T15:22:57Z-
dc.date.available2014-12-08T15:22:57Z-
dc.date.issued2012-01-01en_US
dc.identifier.issn1071-0922en_US
dc.identifier.urihttp://hdl.handle.net/11536/16181-
dc.description.abstractMura defects become visible in a 13.3-in. TFT-LCD using chip-on-glass (COG) packaging when the thickness of the glass substrate is decreased from 0.5 to 0.3 mm. Mura, the non-uniform brightness in LCDs, is caused by COG packaging due to the mismatch of the coefficient of thermal expansion (CTE) and Young's modulus between the glass substrate and the IC-driver Si chips. In this paper, a 3-D finite-element-analysis (FEA) model, coupled with transient thermal analysis is first established to examine the warpage and stress behavior in the upper-glass-plate post-COG-package processing for identifying the root causes of the light-leakage phenomenon. Prior to that, the simulated warpage results are validated by surface-contour measurement. Data and modeling results show that a low bonding temperature together with a low modulus in novel ACF materials can effectively eliminate Mura. Besides, thinner silicon or a shorter length of Si chips as drivers offers enhanced reduction in the localized warpage, and thus can be a practical and low-cost solution for eliminating mura defects.en_US
dc.language.isoen_USen_US
dc.subjectMuraen_US
dc.subjectchip-on-glassen_US
dc.subjectwarpageen_US
dc.subjectstressen_US
dc.subjectfinite-element methoden_US
dc.titleEffects of localized warpage and stress on chip-on-glass packaging: Induced light-leakage phenomenon in mid-sized TFT-LCDen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE SOCIETY FOR INFORMATION DISPLAYen_US
dc.citation.volume20en_US
dc.citation.issue1en_US
dc.citation.epage28en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000301925300004-
dc.citation.woscount0-
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