The Deterioration of a-IGZO TFTs Owing to the Copper Diffusion after the Process of the Source/Drain Metal Formation

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DC 欄位	值	語言
dc.contributor.author	Tai, Ya-Hsiang	en_US
dc.contributor.author	Chiu, Hao-Lin	en_US
dc.contributor.author	Chou, Lu-Sheng	en_US
dc.date.accessioned	2014-12-08T15:22:59Z	-
dc.date.available	2014-12-08T15:22:59Z	-
dc.date.issued	2012	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16187	-
dc.description.abstract	In this work, the influence of copper on amorphous type Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor's (TFTs) transfer curve is studied. The I-D-V-G curves of a-IGZO TFTs with source/drain in the structures of Cu/Ti and Ti/Al/Ti are compared. The results show that the copper greatly deteriorates the performance of the TFTs. The presence of the copper in the channel region of the device is verified by SIMS analysis. A Cu-dipping experiment is conducted by dipping devices into the solution of CuSO4 to confirm the role of copper in the deterioration of the ID-VG curves. The hypothesis is also verified through ATLAS device simulator. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.025206jes]	en_US
dc.language.iso	en_US	en_US
dc.title	The Deterioration of a-IGZO TFTs Owing to the Copper Diffusion after the Process of the Source/Drain Metal Formation	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	159	en_US
dc.citation.issue	5	en_US
dc.citation.epage	J200	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000302211800082	-
dc.citation.woscount	12	-
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