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dc.contributor.authorChen, Kuo-Juen_US
dc.contributor.authorChen, Hsin-Chuen_US
dc.contributor.authorShih, Min-Hsiungen_US
dc.contributor.authorWang, Chao-Hsunen_US
dc.contributor.authorKuo, Ming-Yenen_US
dc.contributor.authorYang, Yi-Chunen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-08T15:23:06Z-
dc.date.available2014-12-08T15:23:06Z-
dc.date.issued2012-07-15en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://hdl.handle.net/11536/16248-
dc.description.abstractThis study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs) in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE) and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs temperature are similar because of their minimal thickness. Furthermore, to verify the effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources to measure the relationship between the temperature and relative PCE. Higher junction temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip. Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as color converting material in LEDs.en_US
dc.language.isoen_USen_US
dc.subjectLight-emitting diodes (LEDs)en_US
dc.subjectGaNen_US
dc.subjectquantum dots (QDs)en_US
dc.subjectphosphoren_US
dc.titleThe Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodesen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume30en_US
dc.citation.issue14en_US
dc.citation.epage2256en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000304242600002-
dc.citation.woscount10-
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