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dc.contributor.authorWei, Hung-Juen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorWang, Ta-Weien_US
dc.contributor.authorLo, Tai-Linen_US
dc.contributor.authorWang, Chia-Lingen_US
dc.date.accessioned2014-12-08T15:23:11Z-
dc.date.available2014-12-08T15:23:11Z-
dc.date.issued2012-06-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://hdl.handle.net/11536/16271-
dc.description.abstractDue to the benefits of Schottky diodes, 0.18-mu m CMOS technology is being promoted for millimeter wave applications. In this paper, 60-GHz dual-conversion down-/up-converters using Schottky diodes are realized by using 0.18-mu m foundry CMOS technology. A CoSi2-Si Schottky diode, fabricated on a lower doped N-well by blocking the threshold voltage adjustment implant, has a lower reverse leakage current and a better ideality factor. Thus, it is ideal for the 60-GHz sub-harmonic mixer design. Two new types of Schottky-diode mixers, a down-conversion sub-harmonic mixer with a dual-band lump-distributed phase-inverter rat-race coupler and an up-conversion sub-harmonic mixer with a trifilar transformer, are realized and employed at the high-frequency conversion stage of the dual-conversion architecture to achieve small size and broadband isolations. The silicon-based Schottky diode with a low turn-on voltage offers great advantage in LO pumping power, especially for an antiparallel diode pair structure. In our Schottky-diode sub-harmonic mixers, the required LO power is only 1 dBm. The dual-conversion down-converter achieves 5-dB conversion gain and 19 dB noise figure under V-dd = 2.5 V and I-dd = 22 mA, and the dual-conversion up-converter, with V-dd = 2.5 V and I-dd = 26 mA, attains greater than 40-dB sideband rejection and -1 dB conversion gain over the whole 60-GHz bandwidth.en_US
dc.language.isoen_USen_US
dc.subjectConverteren_US
dc.subjectdual conversionen_US
dc.subjectmixeren_US
dc.subjectphase-inverter rat-race coupleren_US
dc.subjectSchottky diodeen_US
dc.subjectsingle-sideband rejectionen_US
dc.subjectsub-harmonically pumped mixeren_US
dc.subjecttrifilar transformeren_US
dc.subject0.18-mu m foundry CMOS technologyen_US
dc.subject60-GHzen_US
dc.title60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 mu m Foundry CMOS Technologyen_US
dc.typeArticleen_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume60en_US
dc.citation.issue6en_US
dc.citation.epage1684en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000304857200022-
dc.citation.woscount10-
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