完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, Shiu-Jen | en_US |
dc.contributor.author | Fang, Hau-Wei | en_US |
dc.contributor.author | Hsieh, Jang-Hsing | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2014-12-08T15:23:12Z | - |
dc.date.available | 2014-12-08T15:23:12Z | - |
dc.date.issued | 2012-06-01 | en_US |
dc.identifier.issn | 0025-5408 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/16288 | - |
dc.description.abstract | Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism. (C) 2012 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Amorphous materials | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | Sputtering | en_US |
dc.subject | Electrical properties | en_US |
dc.subject | Magnetic properties | en_US |
dc.subject | Optical properties | en_US |
dc.title | Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique | en_US |
dc.type | Article | en_US |
dc.identifier.journal | MATERIALS RESEARCH BULLETIN | en_US |
dc.citation.volume | 47 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.epage | 1568 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000304384100048 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |