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dc.contributor.authorLiu, Shiu-Jenen_US
dc.contributor.authorFang, Hau-Weien_US
dc.contributor.authorHsieh, Jang-Hsingen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:23:12Z-
dc.date.available2014-12-08T15:23:12Z-
dc.date.issued2012-06-01en_US
dc.identifier.issn0025-5408en_US
dc.identifier.urihttp://hdl.handle.net/11536/16288-
dc.description.abstractAmorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism. (C) 2012 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAmorphous materialsen_US
dc.subjectSemiconductorsen_US
dc.subjectSputteringen_US
dc.subjectElectrical propertiesen_US
dc.subjectMagnetic propertiesen_US
dc.subjectOptical propertiesen_US
dc.titlePhysical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering techniqueen_US
dc.typeArticleen_US
dc.identifier.journalMATERIALS RESEARCH BULLETINen_US
dc.citation.volume47en_US
dc.citation.issue6en_US
dc.citation.epage1568en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000304384100048-
dc.citation.woscount3-
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