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dc.contributor.authorLin, Wen_US
dc.contributor.authorKang, TKen_US
dc.contributor.authorPerng, YCen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:01:16Z-
dc.date.available2014-12-08T15:01:16Z-
dc.date.issued1997-12-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.7362en_US
dc.identifier.urihttp://hdl.handle.net/11536/162-
dc.description.abstractAfter the exposure of metal oxide semiconductor (MOS) capacitors with antenna structures to the helicon O-2 plasma, the leakage current. charge-to-breakdown (Q(bd)) and capacitance-voltage (C-V) curves have been characterized to realize the charging damages. The results indicate that the quasi static C-V(QSCV) distortion and Q(bd) depend on the exposure time rather than the antenna ratio. The QSCV and Q(bd) Show a two stage degradation as the exposure time increases. The leakage current increases slightly for the specimens exposed to the plasma for less than 120 s, and increases considerably for the ones with the exposure time of 300 s. Based on these results, the degradation mechanism of gate oxides under the helicon O-2 plasma is established.en_US
dc.language.isoen_USen_US
dc.subjectleakage currenten_US
dc.subjectC-V curveen_US
dc.subjectQ(bd)en_US
dc.subjectantenna structureen_US
dc.subjectcharging damageen_US
dc.titleCharging damages to gate oxides in a helicon O-2 plasmaen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.36.7362en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume36en_US
dc.citation.issue12Aen_US
dc.citation.spage7362en_US
dc.citation.epage7366en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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