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dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorSou, Kuok-Panen_US
dc.contributor.authorChen, Chieh-Hanen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorHuang, Ji-Kaien_US
dc.contributor.authorLin, Chung-Hsiangen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.date.accessioned2014-12-08T15:23:13Z-
dc.date.available2014-12-08T15:23:13Z-
dc.date.issued2012-05-21en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://hdl.handle.net/11536/16301-
dc.description.abstractWe report the observation of lasing action from an optically pumped gallium nitride quasicrystal nanorod arrays. The nanorods were fabricated from a GaN substrate by patterned etching, followed by epitaxial regrowth. The nanorods were arranged in a 12-fold symmetric quasicrystal pattern. The regrowth grew hexagonal crystalline facets and core-shell multiple quantum wells (MQWs) on nanorods. Under optical pumping, multiple lasing peaks resembling random lasing were observed. The lasing was identified to be from the emission of MQWs on the nanorod sidewalls. The resonant spectrum and mode field of the 12-fold symmetric photonic quasicrystal nanorod arrays is discussed. (C) 2012 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleLasing action in gallium nitride quasicrystal nanorod arraysen_US
dc.typeArticleen_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume20en_US
dc.citation.issue11en_US
dc.citation.epage12457en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000304403100090-
dc.citation.woscount5-
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