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dc.contributor.authorLin, H. Y.en_US
dc.contributor.authorChen, Y. J.en_US
dc.contributor.authorChang, C. L.en_US
dc.contributor.authorLi, X. F.en_US
dc.contributor.authorKuo, C. H.en_US
dc.contributor.authorHsu, S. C.en_US
dc.contributor.authorLiu, C. Y.en_US
dc.date.accessioned2014-12-08T15:23:22Z-
dc.date.available2014-12-08T15:23:22Z-
dc.date.issued2012-03-01en_US
dc.identifier.issn0884-2914en_US
dc.identifier.urihttp://hdl.handle.net/11536/16368-
dc.description.abstractChemical wet etching on c-plane sapphire wafers by three etching solutions (H3PO4, H2SO4, and H3PO4/H2SO4 mixing solution) was studied. Among these etching agents, the mixing H3PO4/H2SO4 solution has the fastest etching rate (1.5 mu m/min). Interestingly, we found that H2SO4 does not etch the c-plane sapphire wafer in thickness; instead, a facet pyramidal pattern is formed on the c-plane sapphire wafer. GaN light-emitting diode (LED) epitaxial structure was grown on the sapphire wafer with the pyramidal pattern and the standard flat sapphire wafer. X-ray diffraction and photoluminescence measurement show that the pyramidal pattern on the sapphire wafer improved crystalline quality but augmented the compressive stress level in the GaN LED epilayer. The horizontal LED chips fabricated on the pyramidal-patterned sapphire wafer have a larger light output than the horizontal LED chips fabricated on the standard flat sapphire wafer by 20%.en_US
dc.language.isoen_USen_US
dc.titleCharacterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrateen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF MATERIALS RESEARCHen_US
dc.citation.volume27en_US
dc.citation.issue6en_US
dc.citation.epage971en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000304065000015-
dc.citation.woscount1-
Appears in Collections:Articles


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