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dc.contributor.authorHsu, Sheng-Yaoen_US
dc.contributor.authorChen, Hsiao-Yuen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2014-12-08T15:23:31Z-
dc.date.available2014-12-08T15:23:31Z-
dc.date.issued2012-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://hdl.handle.net/11536/16446-
dc.description.abstractA novel 3-D bonding technology with cosputtered copper and titanium as bonding material is proposed and investigated based on the diffusion mechanism of cosputtered metal during bonding. This technology features a self-formed adhesion layer for Cu metal layers and interconnects. In addition, cosputtered Cu/Ti bonding exhibits good electrical performance as well as high resistance to multiple current stressing. With the advantages of fabrication efficiency and reliable bond quality, cosputtered Cu/Ti bonding technology presents the potential to be applied in 3-D integration.en_US
dc.language.isoen_USen_US
dc.subjectAdhesion layeren_US
dc.subjectmetal bondingen_US
dc.subject3-D integrationen_US
dc.titleCosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applicationsen_US
dc.typeArticleen_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue7en_US
dc.citation.epage1048en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000305835300044-
dc.citation.woscount3-
Appears in Collections:Articles


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