標題: | Novel Cu-to-Cu Bonding With Ti Passivation at 180 degrees C in 3-D Integration |
作者: | Huang, Yan-Pin Chien, Yu-San Tzeng, Ruoh-Ning Shy, Ming-Shaw Lin, Teu-Hua Chen, Kou-Hua Chiu, Chi-Tsung Chiou, Jin-Chern Chuang, Ching-Te Hwang, Wei Tong, Ho-Ming Chen, Kuan-Neng 交大名義發表 National Chiao Tung University |
關鍵字: | 3-D integration;Cu bonding;Ti passivation |
公開日期: | 1-十二月-2013 |
摘要: | A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180 degrees C. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration. |
URI: | http://dx.doi.org/10.1109/LED.2013.2285702 http://hdl.handle.net/11536/23230 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2285702 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 12 |
起始頁: | 1551 |
結束頁: | 1553 |
顯示於類別: | 期刊論文 |