標題: Novel Cu-to-Cu Bonding With Ti Passivation at 180 degrees C in 3-D Integration
作者: Huang, Yan-Pin
Chien, Yu-San
Tzeng, Ruoh-Ning
Shy, Ming-Shaw
Lin, Teu-Hua
Chen, Kou-Hua
Chiu, Chi-Tsung
Chiou, Jin-Chern
Chuang, Ching-Te
Hwang, Wei
Tong, Ho-Ming
Chen, Kuan-Neng
交大名義發表
National Chiao Tung University
關鍵字: 3-D integration;Cu bonding;Ti passivation
公開日期: 1-十二月-2013
摘要: A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180 degrees C. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.
URI: http://dx.doi.org/10.1109/LED.2013.2285702
http://hdl.handle.net/11536/23230
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2285702
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 12
起始頁: 1551
結束頁: 1553
顯示於類別:期刊論文


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