Low Temperature (< 180 degrees C) Bonding for 3D Integration

Title:	Low Temperature (< 180 degrees C) Bonding for 3D Integration
Authors:	Huang, Yan-Pin Tzeng, Ruoh-Ning Chien, Yu-San Shy, Ming-Shaw Lin, Teu-Hua Chen, Kou-Hua Chuang, Ching-Te Hwang, Wei Chiu, Chi-Tsung Tong, Ho-Ming Chen, Kuan-Neng 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	Bonding technology;3D integration;interconnects
Issue Date:	2013
Abstract:	Three types of bonding, including Cu-In, Sn/In-Cu, and Cu/Ti-Ti/Cu, are investigated for the application of 3D interconnects. Cu-In bonding and Sn/In-Cu bonding can form intermetallic compounds at the bonding temperature lower than 180 degrees C. In addition, for Cu/Ti-Ti/Cu bonding, Cu can be protected from oxidation by capping Ti on Cu surface before bonding. This method can further decrease bonding temperature. All bonded structures have shown excellent electrical performance and reliability characteristics. Based on bond results, these structures can be applied for low temperature bonding in 3D interconnects.
URI:	http://hdl.handle.net/11536/23908
ISBN:	978-1-4673-6484-3
ISSN:	2164-0157
Journal:	2013 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC)
Appears in Collections:	Conferences Paper