標題: Low Temperature (< 180 degrees C) Bonding for 3D Integration
作者: Huang, Yan-Pin
Tzeng, Ruoh-Ning
Chien, Yu-San
Shy, Ming-Shaw
Lin, Teu-Hua
Chen, Kou-Hua
Chuang, Ching-Te
Hwang, Wei
Chiu, Chi-Tsung
Tong, Ho-Ming
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Bonding technology;3D integration;interconnects
公開日期: 2013
摘要: Three types of bonding, including Cu-In, Sn/In-Cu, and Cu/Ti-Ti/Cu, are investigated for the application of 3D interconnects. Cu-In bonding and Sn/In-Cu bonding can form intermetallic compounds at the bonding temperature lower than 180 degrees C. In addition, for Cu/Ti-Ti/Cu bonding, Cu can be protected from oxidation by capping Ti on Cu surface before bonding. This method can further decrease bonding temperature. All bonded structures have shown excellent electrical performance and reliability characteristics. Based on bond results, these structures can be applied for low temperature bonding in 3D interconnects.
URI: http://hdl.handle.net/11536/23908
ISBN: 978-1-4673-6484-3
ISSN: 2164-0157
期刊: 2013 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC)
Appears in Collections:Conferences Paper