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dc.contributor.authorHuang, Yan-Pinen_US
dc.contributor.authorChien, Yu-Sanen_US
dc.contributor.authorTzeng, Ruoh-Ningen_US
dc.contributor.authorShy, Ming-Shawen_US
dc.contributor.authorLin, Teu-Huaen_US
dc.contributor.authorChen, Kou-Huaen_US
dc.contributor.authorChiu, Chi-Tsungen_US
dc.contributor.authorChiou, Jin-Chernen_US
dc.contributor.authorChuang, Ching-Teen_US
dc.contributor.authorHwang, Weien_US
dc.contributor.authorTong, Ho-Mingen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2014-12-08T15:33:26Z-
dc.date.available2014-12-08T15:33:26Z-
dc.date.issued2013-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2285702en_US
dc.identifier.urihttp://hdl.handle.net/11536/23230-
dc.description.abstractA novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180 degrees C. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.en_US
dc.language.isoen_USen_US
dc.subject3-D integrationen_US
dc.subjectCu bondingen_US
dc.subjectTi passivationen_US
dc.titleNovel Cu-to-Cu Bonding With Ti Passivation at 180 degrees C in 3-D Integrationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2285702en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue12en_US
dc.citation.spage1551en_US
dc.citation.epage1553en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000327640400029-
dc.citation.woscount0-
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