Novel Cu-to-Cu Bonding With Ti Passivation at 180 degrees C in 3-D Integration

Title:	Novel Cu-to-Cu Bonding With Ti Passivation at 180 degrees C in 3-D Integration
Authors:	Huang, Yan-Pin Chien, Yu-San Tzeng, Ruoh-Ning Shy, Ming-Shaw Lin, Teu-Hua Chen, Kou-Hua Chiu, Chi-Tsung Chiou, Jin-Chern Chuang, Ching-Te Hwang, Wei Tong, Ho-Ming Chen, Kuan-Neng 交大名義發表 National Chiao Tung University
Keywords:	3-D integration;Cu bonding;Ti passivation
Issue Date:	1-Dec-2013
Abstract:	A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180 degrees C. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.
URI:	http://dx.doi.org/10.1109/LED.2013.2285702 http://hdl.handle.net/11536/23230
ISSN:	0741-3106
DOI:	10.1109/LED.2013.2285702
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	34
Issue:	12
Begin Page:	1551
End Page:	1553
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.