Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications

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DC 欄位	值	語言
dc.contributor.author	Hsu, Sheng-Yao	en_US
dc.contributor.author	Chen, Hsiao-Yu	en_US
dc.contributor.author	Chen, Kuan-Neng	en_US
dc.date.accessioned	2014-12-08T15:23:31Z	-
dc.date.available	2014-12-08T15:23:31Z	-
dc.date.issued	2012-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16446	-
dc.description.abstract	A novel 3-D bonding technology with cosputtered copper and titanium as bonding material is proposed and investigated based on the diffusion mechanism of cosputtered metal during bonding. This technology features a self-formed adhesion layer for Cu metal layers and interconnects. In addition, cosputtered Cu/Ti bonding exhibits good electrical performance as well as high resistance to multiple current stressing. With the advantages of fabrication efficiency and reliable bond quality, cosputtered Cu/Ti bonding technology presents the potential to be applied in 3-D integration.	en_US
dc.language.iso	en_US	en_US
dc.subject	Adhesion layer	en_US
dc.subject	metal bonding	en_US
dc.subject	3-D integration	en_US
dc.title	Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications	en_US
dc.type	Article	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	33	en_US
dc.citation.issue	7	en_US
dc.citation.epage	1048	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000305835300044	-
dc.citation.woscount	3	-
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