Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

標題:	Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide
作者:	Cheng, C. H. Chen, P. C. Wu, Y. H. Wu, M. J. Yeh, F. S. Chin, Albert 機械工程學系電子工程學系及電子研究所 Department of Mechanical Engineering Department of Electronics Engineering and Institute of Electronics
關鍵字:	Hopping conduction;Uniformity;TaON;RRAM;GeOx
公開日期:	1-Jul-2012
摘要:	Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10(6) cycling endurance are achieved in Ni/GeOx/Ta2O5-yNy/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta2O5-yNy for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents. (C) 2012 Elsevier Ltd. All rights reserved.
URI:	http://hdl.handle.net/11536/16458
ISSN:	0038-1101
期刊:	SOLID-STATE ELECTRONICS
Volume:	73
Issue:
結束頁:	60
Appears in Collections:	Articles

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