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dc.contributor.authorChang, Chia-Yien_US
dc.contributor.authorChen, Hung-Mingen_US
dc.date.accessioned2014-12-08T15:01:17Z-
dc.date.available2014-12-08T15:01:17Z-
dc.date.issued2008-01-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2007.912202en_US
dc.identifier.urihttp://hdl.handle.net/11536/164-
dc.description.abstractDue to higher input/output (I/O) count and power delivery problem in deep submicrometer (DSM) regime, flip-chip technology, especially for area-array architecture, has provided more opportunities for adoption than traditional peripheral bonding design style in high-performance application-specific integrated circuit and microprocessor designs. However, it is hard to tell which technique can provide better design cost edge in usually concerned perspectives. In this paper, we present a methodology to convert a previous peripheral bonding design to an area-I/O flip-chip design. It is based on an I/O buffer modeling and an I/O planning algorithm to legalize I/O buffer blocks with core placement without sacrificing much of the previous optimization in the original core placement. The experimental results have shown that we have achieved better area and I/O wirelength in area-IO flip-chip configuration (especially for pad-limit designs), compared with peripheral bonding configuration in packaging consideration.en_US
dc.language.isoen_USen_US
dc.subjectarea-array flip-chipen_US
dc.subjectdesign migrationen_US
dc.subjectinput/output (I/O) planning and legalizationen_US
dc.titleDesign migration from peripheral ASIC design to area-I/O flip-chip design by chip I/O planning and legalizationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TVLSI.2007.912202en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume16en_US
dc.citation.issue1en_US
dc.citation.spage108en_US
dc.citation.epage112en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000251952100012-
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