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dc.contributor.authorYuan, Jiann-Shiunen_US
dc.contributor.authorYen, Hsuan-Deren_US
dc.contributor.authorChen, Shuyuen_US
dc.contributor.authorWang, Ruey-Lueen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.authorJuang, Ying-Zongen_US
dc.contributor.authorTu, Chih-Hoen_US
dc.contributor.authorYeh, Wen-Kuanen_US
dc.contributor.authorMa, Junen_US
dc.date.accessioned2014-12-08T15:23:37Z-
dc.date.available2014-12-08T15:23:37Z-
dc.date.issued2012-06-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://hdl.handle.net/11536/16522-
dc.description.abstractA cascode class-E power amplifier (PA) operating at 5.2 GHz has been designed using Advanced Design System simulation. RF circuit performances such as output power and power-added efficiency before and after RF stress have been experimentally investigated. The measured output power, power-added efficiency, and linearity after high-input-power RF stress at elevated supply voltage show significant circuit degradations. The impact of hot-carrier injection and gate oxide soft breakdown on cascode class-E PA reliability is discussed.en_US
dc.language.isoen_USen_US
dc.subjectCascode class Een_US
dc.subjectgate oxide breakdownen_US
dc.subjectoutput poweren_US
dc.subjectpower amplifier (PA)en_US
dc.subjectpower efficiencyen_US
dc.subjectreliabilityen_US
dc.titleExperimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliabilityen_US
dc.typeArticleen_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume12en_US
dc.citation.issue2en_US
dc.citation.epage369en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000305085100024-
dc.citation.woscount1-
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