Characterization of SOA in Time Domain and the Improvement Techniques for Using in High-Voltage Integrated Circuits

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DC 欄位	值	語言
dc.contributor.author	Chen, Wen-Yi	en_US
dc.contributor.author	Ker, Ming-Dou	en_US
dc.date.accessioned	2014-12-08T15:23:38Z	-
dc.date.available	2014-12-08T15:23:38Z	-
dc.date.issued	2012-06-01	en_US
dc.identifier.issn	1530-4388	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16523	-
dc.description.abstract	Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed.	en_US
dc.language.iso	en_US	en_US
dc.subject	Electrical safe operating area (SOA) (eSOA)	en_US
dc.subject	power MOSFETs	en_US
dc.subject	SOA	en_US
dc.subject	snapback	en_US
dc.subject	thermal SOA (tSOA)	en_US
dc.title	Characterization of SOA in Time Domain and the Improvement Techniques for Using in High-Voltage Integrated Circuits	en_US
dc.type	Article	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY	en_US
dc.citation.volume	12	en_US
dc.citation.issue	2	en_US
dc.citation.epage	382	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000305085100026	-
dc.citation.woscount	6	-
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