標題: | BORON INCORPORATION IN SI1-XGEX FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4 |
作者: | CHEN, LP CHOU, CT HUANG, GW TSAI, WC CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
公開日期: | 13-十一月-1995 |
摘要: | 0.1% B2H6 diluted in hydrogen is used as the p-type dopant gas in Si1-xGex grown by ultrahigh vacuum chemical vapor deposition (UHVCVD) using Si2H6 and GeH4. The boron concentration is evaluated by secondary ion mass spectrometry (SIMS). The boron concentration of Si1-xGex increases with the increase of the GeH4 flow rate, that is, Ge fraction, by keeping Si2H6 and B2H6 how rates constant. The result may be due to the increase of the vacant surface sites which is caused by the increase of the hydrogen desorption rate when a higher Ge fraction epilayer is grown. (C) 1995 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.114932 http://hdl.handle.net/11536/1656 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.114932 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 67 |
Issue: | 20 |
起始頁: | 3001 |
結束頁: | 3003 |
顯示於類別: | 期刊論文 |