標題: | Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications |
作者: | Lin, Wei-Hsun Wang, Kai-Wei Chang, Shu-Wei Shih, Min-Hsiung Lin, Shih-Yen 光電學院 College of Photonics |
公開日期: | 1-一月-1970 |
摘要: | Type-II GaSb/GaAs coupled quantum rings have exhibited two-order-of-magnitude luminescence enhancement and ten-times elongation of recombination lifetime at room temperature as compared with regular rings. The longer lifetime suggests that a significant amount of electrons are confined in coupled rings rather than simply leaking away. These phenomena indicate that type-II nanostructures can be potentially utilized for room-temperature luminescence and carrier storage applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737443] |
URI: | http://dx.doi.org/31906 http://hdl.handle.net/11536/16626 |
ISSN: | 0003-6951 |
DOI: | 31906 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 101 |
Issue: | 3 |
結束頁: | |
顯示於類別: | 期刊論文 |