Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications

doi:31906

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DC Field	Value	Language
dc.contributor.author	Lin, Wei-Hsun	en_US
dc.contributor.author	Wang, Kai-Wei	en_US
dc.contributor.author	Chang, Shu-Wei	en_US
dc.contributor.author	Shih, Min-Hsiung	en_US
dc.contributor.author	Lin, Shih-Yen	en_US
dc.date.accessioned	2014-12-08T15:23:53Z	-
dc.date.available	2014-12-08T15:23:53Z	-
dc.date.issued	1970-01-01	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/31906	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16626	-
dc.description.abstract	Type-II GaSb/GaAs coupled quantum rings have exhibited two-order-of-magnitude luminescence enhancement and ten-times elongation of recombination lifetime at room temperature as compared with regular rings. The longer lifetime suggests that a significant amount of electrons are confined in coupled rings rather than simply leaking away. These phenomena indicate that type-II nanostructures can be potentially utilized for room-temperature luminescence and carrier storage applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737443]	en_US
dc.language.iso	en_US	en_US
dc.title	Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications	en_US
dc.type	Article	en_US
dc.identifier.doi	31906	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	101	en_US
dc.citation.issue	3	en_US
dc.citation.epage		en_US
dc.contributor.department	光電學院	zh_TW
dc.contributor.department	College of Photonics	en_US
dc.identifier.wosnumber	WOS:000306748000027	-
dc.citation.woscount	6	-
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