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dc.contributor.authorYang, Chan-Shanen_US
dc.contributor.authorChang, Chia-Huaen_US
dc.contributor.authorLin, Mao-Hsiangen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorWada, Osamuen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2014-12-08T15:23:54Z-
dc.date.available2014-12-08T15:23:54Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://hdl.handle.net/11536/16633-
dc.description.abstract"Indium-tin-oxide (ITO) nanowhiskers with attractive electrical and anti-reflection properties were prepared by the glancing-angle electron-beam evaporation technique. Structural and crystalline properties of such nanostructures were examined by scanning transmission electron microscopy and X-ray diffraction. Their frequency-dependent complex conductivities, refractive indices and absorption coefficients have been characterized with terahertz time-domain spectroscopy (THz-TDS), in which the nanowhiskers were considered as a graded-refractive-index (GRIN) structure instead of the usual thin film model. The electrical properties of ITO GRIN structures are analyzed and fitted well with Drude-Smith model in the 0.2 similar to 2.0 THz band. Our results indicate that the ITO nanowhiskers and its bottom layer atop the substrate exhibit longer carrier scattering times than ITO thin films. This signifies that ITO nanowhiskers have an excellent crystallinity with large grain size, consistent with X-ray data. Besides, we show a strong backscattering effect and fully carrier localization in the ITO nanowhiskers. (c) 2012 Optical Society of America"en_US
dc.language.isoen_USen_US
dc.titleTHz conductivities of indium-tin-oxide nanowhiskers as a graded-refractive-index structureen_US
dc.typeArticleen_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume20en_US
dc.citation.issue14en_US
dc.citation.epageA441en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000306176100001-
dc.citation.woscount10-
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