標題: | Microcrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin-film transistors |
作者: | Liang, CW Chiang, WC Feng, MS 材料科學與工程學系 電控工程研究所 奈米中心 Department of Materials Science and Engineering Institute of Electrical and Control Engineering Nano Facility Center |
關鍵字: | microcrystallinity;mu c-Si, H;PECVD;volume fraction;TFT;a-Si, H |
公開日期: | 1-十一月-1995 |
摘要: | The microcrystallinity of hydrogenated amorphous silicon films deposited by the conventional radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) method and its dependence on chamber pressure are discussed. In a wide range of pressure at which the microcrystalline film can be formed, a critical pressure (500 mT) is found. Films deposited at this critical pressure possess the highest crystalline volume fraction and the smallest grain size. An ion-bombardment-assisted model is proposed to explain the experimental results. Concerning the applications of microcrystalline films to thin-film transistors (TFTs), the subthreshold swing and the field effect mobility are studied, both of which are found to be smaller than those of the hydrogenated amorphous silicon (a-Si:H) TFTs. |
URI: | http://hdl.handle.net/11536/1669 |
ISSN: | 0021-4922 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 34 |
Issue: | 11 |
起始頁: | 5943 |
結束頁: | 5948 |
顯示於類別: | 期刊論文 |