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dc.contributor.authorLiang, CWen_US
dc.contributor.authorChiang, WCen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:03:05Z-
dc.date.available2014-12-08T15:03:05Z-
dc.date.issued1995-11-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/1669-
dc.description.abstractThe microcrystallinity of hydrogenated amorphous silicon films deposited by the conventional radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) method and its dependence on chamber pressure are discussed. In a wide range of pressure at which the microcrystalline film can be formed, a critical pressure (500 mT) is found. Films deposited at this critical pressure possess the highest crystalline volume fraction and the smallest grain size. An ion-bombardment-assisted model is proposed to explain the experimental results. Concerning the applications of microcrystalline films to thin-film transistors (TFTs), the subthreshold swing and the field effect mobility are studied, both of which are found to be smaller than those of the hydrogenated amorphous silicon (a-Si:H) TFTs.en_US
dc.language.isoen_USen_US
dc.subjectmicrocrystallinityen_US
dc.subjectmu c-Si, Hen_US
dc.subjectPECVDen_US
dc.subjectvolume fractionen_US
dc.subjectTFTen_US
dc.subjecta-Si, Hen_US
dc.titleMicrocrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin-film transistorsen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume34en_US
dc.citation.issue11en_US
dc.citation.spage5943en_US
dc.citation.epage5948en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1995TX61100009-
dc.citation.woscount7-
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