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dc.contributor.authorWANG, FSen_US
dc.contributor.authorTSAI, MJen_US
dc.contributor.authorCHENG, HCen_US
dc.date.accessioned2014-12-08T15:03:06Z-
dc.date.available2014-12-08T15:03:06Z-
dc.date.issued1995-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.468281en_US
dc.identifier.urihttp://hdl.handle.net/11536/1678-
dc.description.abstractThe NH3 plasma passivation has been performed for the first time on the polycrystalline silicon (poly-Si) thin-film transistors (TFT's). It is found that the TFT's after the NH3 plasma passivation achieve better device performances, including the off-current below 0.1 pA/mu m and the on/off current ratio higher than 10(8), and also better hot-carrier reliability as well as thermal stability than the H-2-plasma ones, These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at SiO2/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films.en_US
dc.language.isoen_USen_US
dc.titleTHE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.468281en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume16en_US
dc.citation.issue11en_US
dc.citation.spage503en_US
dc.citation.epage505en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995TA68100012-
dc.citation.woscount27-
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