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dc.contributor.authorChen, Guo-Juen_US
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorJang, Jason Shian-Chingen_US
dc.contributor.authorShih, Yung-Huien_US
dc.contributor.authorChen, Yuan-Tsungen_US
dc.contributor.authorJen, Shien-Uangen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:24:07Z-
dc.date.available2014-12-08T15:24:07Z-
dc.date.issued2012-11-01en_US
dc.identifier.issn0966-9795en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.intermet.2012.03.017en_US
dc.identifier.urihttp://hdl.handle.net/11536/16791-
dc.description.abstractThe microstructure and magnetic properties of the amorphous Co-Fe-Zr-B thin films grown on glass substrates by dc magnetron sputtering are investigated using differential scanning calorimetry (DSC), transmission electron microscopy (TEM), and superconducting quantum interference device (SQUID) techniques. The Co-Fe-Zr-B thin films deposited at room temperature were annealed at temperatures ranged from 683 K to 773 K. Experimental results indicated that the coercivity (H-c) of the Co-Fe-Zr-B thin films is significantly influenced by residual stress and crystalline phases within the films. The correlation of the coercivity and the microstructure of Co-Fe-Zr-B thin films are discussed. After annealed at 683 K, the coercivity of the Co-Fe-Zr-B film was as low as 1.2 Oe. (C) 2012 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectGlassesen_US
dc.subjectmetallicen_US
dc.subjectCalorimetryen_US
dc.subjectThermal stabilityen_US
dc.subjectMicroscopyen_US
dc.subjectMagnetic propertiesen_US
dc.titleThe effects of annealing temperature and sputtering power on the structure and magnetic properties of the Co-Fe-Zr-B thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.intermet.2012.03.017en_US
dc.identifier.journalINTERMETALLICSen_US
dc.citation.volume30en_US
dc.citation.issueen_US
dc.citation.spage127en_US
dc.citation.epage131en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000308847400023-
dc.citation.woscount1-
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