完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Chen, Guo-Ju | en_US |
dc.contributor.author | Jian, Sheng-Rui | en_US |
dc.contributor.author | Jang, Jason Shian-Ching | en_US |
dc.contributor.author | Shih, Yung-Hui | en_US |
dc.contributor.author | Chen, Yuan-Tsung | en_US |
dc.contributor.author | Jen, Shien-Uang | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2014-12-08T15:24:07Z | - |
dc.date.available | 2014-12-08T15:24:07Z | - |
dc.date.issued | 2012-11-01 | en_US |
dc.identifier.issn | 0966-9795 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.intermet.2012.03.017 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/16791 | - |
dc.description.abstract | The microstructure and magnetic properties of the amorphous Co-Fe-Zr-B thin films grown on glass substrates by dc magnetron sputtering are investigated using differential scanning calorimetry (DSC), transmission electron microscopy (TEM), and superconducting quantum interference device (SQUID) techniques. The Co-Fe-Zr-B thin films deposited at room temperature were annealed at temperatures ranged from 683 K to 773 K. Experimental results indicated that the coercivity (H-c) of the Co-Fe-Zr-B thin films is significantly influenced by residual stress and crystalline phases within the films. The correlation of the coercivity and the microstructure of Co-Fe-Zr-B thin films are discussed. After annealed at 683 K, the coercivity of the Co-Fe-Zr-B film was as low as 1.2 Oe. (C) 2012 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Glasses | en_US |
dc.subject | metallic | en_US |
dc.subject | Calorimetry | en_US |
dc.subject | Thermal stability | en_US |
dc.subject | Microscopy | en_US |
dc.subject | Magnetic properties | en_US |
dc.title | The effects of annealing temperature and sputtering power on the structure and magnetic properties of the Co-Fe-Zr-B thin films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.intermet.2012.03.017 | en_US |
dc.identifier.journal | INTERMETALLICS | en_US |
dc.citation.volume | 30 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 127 | en_US |
dc.citation.epage | 131 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000308847400023 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |