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dc.contributor.authorRosenstein, B.en_US
dc.contributor.authorShapiro, I.en_US
dc.contributor.authorShapiro, B. Ya.en_US
dc.contributor.authorDeutch, E.en_US
dc.date.accessioned2014-12-08T15:24:17Z-
dc.date.available2014-12-08T15:24:17Z-
dc.date.issued2012-09-01en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physc.2011.12.012en_US
dc.identifier.urihttp://hdl.handle.net/11536/16876-
dc.description.abstractThe spectrum of core excitations of the Abrikosov vortex pinned by a dielectric inclusion or nanoholes of the size of the coherence length is considered using the Bogoliubov-deGennes equations beyond the semiclassical approximation. While the lowest excitation, mini-gap, in the unpinned (or pinned by a metallic defect) vortex is of the order of Delta(2)/epsilon(F), it becomes of the order of the superconducting gap Delta. The reconstruction of the quasiparticle excitations' spectrum has a significant impact on optical properties and on the tunneling density of states. We calculate the absorption amplitude and point out that, while in STM the energy gap Delta(DOS) is between a quasiparticles state with angular momentum mu(e) = mu(s) > 1/2 and quasi-hole with mu(h) = mu(s) the microwave absorption gap, Delta(dir) is between states with mu(e) = mu(h) + 1. It is shown that Delta(dir) > Delta(DOS). The large mini-gap might play a role in magneto-transport phenomena broadly associated with the "superconductor-insulator" transition in quasi 2D systems in which small insulating inclusions are generally present. (C) 2012 Elsevier B. V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectPinned vortexen_US
dc.subjectBogoliubov-deGennes theoryen_US
dc.subjectMicrowave absorptionen_US
dc.titleMicrowave absorption in the cores of the Abrikosov vortices pinned by artificial insulator inclusionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.physc.2011.12.012en_US
dc.identifier.journalPHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONSen_US
dc.citation.volume479en_US
dc.citation.issueen_US
dc.citation.spage57en_US
dc.citation.epage60en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000308580600012-
dc.citation.woscount0-
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