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dc.contributor.authorCheng, Huang-Chungen_US
dc.contributor.authorWu, Chun-Yuen_US
dc.contributor.authorHsu, Po-Yenen_US
dc.contributor.authorWang, Chao-Lungen_US
dc.contributor.authorLiao, Ta-Chuanen_US
dc.contributor.authorWu, You-Linen_US
dc.date.accessioned2014-12-08T15:24:17Z-
dc.date.available2014-12-08T15:24:17Z-
dc.date.issued2012-09-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2012.2205554en_US
dc.identifier.urihttp://hdl.handle.net/11536/16882-
dc.description.abstractDry-type poly-Si nanowire pH sensors with high-k dielectrics have been demonstrated with the aid of novel focus ion beam engineered capillary atomic force microscopy (C-AFM) tip. By means of this C-AFM tip coating technique, the relatively few testing solutions can be transferred onto the surface of a nanowire, preventing the sensor device from the immersion in the liquid and therefore suppressing the possible leakage current from the testing solution. As compared with the TEOS SiO2, the pH sensors comprising Al2O3, TiO2, and HfO2 high-k materials exhibit the better sensitivities due to their enhanced capacitances. The best sensitivity (138.7 nA/pH) and linearity (99.69%) for a HfO2 dielectric can be ascribed to the higher k value and larger bandgap with respect to the Al2O3 and TiO2, accordingly. Consequently, the C-AFM tip coating technique incorporating with HfO2 dielectric suggests the potential for the detection of a minute quantity of biomedicines.en_US
dc.language.isoen_USen_US
dc.subjectHigh-k dielectricsen_US
dc.subjectnanowireen_US
dc.subjectpH sensoren_US
dc.titleHigh Sensitivity of Dry-Type Nanowire Sensors With High-k Dielectrics for pH Detection via Capillary Atomic Force Microscope Tip Coating Techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2012.2205554en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue9en_US
dc.citation.spage1312en_US
dc.citation.epage1314en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000308021800032-
dc.citation.woscount1-
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