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dc.contributor.authorPeng, P. C.en_US
dc.contributor.authorWang, H. Y.en_US
dc.contributor.authorLan, R. L.en_US
dc.contributor.authorLu, H. H.en_US
dc.contributor.authorLin, G. R.en_US
dc.contributor.authorLin, G.en_US
dc.contributor.authorChi, J. Y.en_US
dc.date.accessioned2014-12-08T15:24:17Z-
dc.date.available2014-12-08T15:24:17Z-
dc.date.issued2012-09-01en_US
dc.identifier.issn1054-660Xen_US
dc.identifier.urihttp://dx.doi.org/10.1134/S1054660X12090149en_US
dc.identifier.urihttp://hdl.handle.net/11536/16885-
dc.description.abstractThis study investigates, for the first time, static and dynamic wavelength switching characteristics of the 1.3 mu m quantum-dot vertical-cavity surface-emitting laser (QD VCSEL). The free-running QD VCSEL with lambda 1 and lambda 2 state innately is injected by a laser source with lambda 1 state. When the injection power exceeds the threshold power, the dominant state of the QD VCSEL changes from lambda 2 to lambda 1 state. Results of this study demonstrate that the wavelength switching based on a 1.3 mu m QD VCSEL has a simpler and more cost-effective configuration than those of previous systems.en_US
dc.language.isoen_USen_US
dc.titleWavelength switching based on quantum-dot vertical-cavity surface-emitting laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1134/S1054660X12090149en_US
dc.identifier.journalLASER PHYSICSen_US
dc.citation.volume22en_US
dc.citation.issue9en_US
dc.citation.spage1373en_US
dc.citation.epage1377en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000308289900002-
dc.citation.woscount1-
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