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dc.contributor.authorChen, Yen-Tingen_US
dc.contributor.authorTsai, Wen-Cheen_US
dc.contributor.authorChen, Wen-Yenen_US
dc.contributor.authorHsiao, Ching-Lienen_US
dc.contributor.authorHsu, Hsu-Chengen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorHsu, Tzu-Minen_US
dc.contributor.authorChen, Kuei-Hsienen_US
dc.contributor.authorChen, Li-Chyongen_US
dc.date.accessioned2014-12-08T15:24:25Z-
dc.date.available2014-12-08T15:24:25Z-
dc.date.issued2012-07-16en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.20.016166en_US
dc.identifier.urihttp://hdl.handle.net/11536/16935-
dc.description.abstractWafer-scale production of single InGaN quantum disks (QD) in-a-nanorod array with small rod diameter (> 9 nm) and low rod-density (< 10(8) cm(-2)) has been achieved without extensive processing steps. Excitation power-dependent mu PL spectrum of single QD reveals multi-excitonic peak with 0.75 meV blue-shift for 3 orders of magnitude increasing power, indicating the present system is spectrally stable and nearly free of quantum-confined Stark effects, due possibly to the strain relaxation induced by free surface of small rod diameters. The fully polarized emissions, a high working temperature (180 K), low rod density and good alignment, render this system promising as a potential quantum photon source. (C) 2012 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleGrowth of sparse arrays of narrow GaN nanorods hosting spectrally stable InGaN quantum disksen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.20.016166en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume20en_US
dc.citation.issue15en_US
dc.citation.spage16166en_US
dc.citation.epage16173en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000307055800003-
dc.citation.woscount5-
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