標題: High-Performance Polycrystalline Silicon Thin-Film Transistors with Two-Dimensional Location Control of the Grain Boundary via Excimer Laser Crystallization
作者: Wang, Chao-Lung
Lee, I-Che
Wu, Chun-Yu
Liao, Chan-Yu
Cheng, Yu-Ting
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Excimer Laser Crystallization (ELC);Polycrystalline Silicon;Two-Dimensional (2-D);Thin-Film Transistors (TFTs)
公開日期: 1-Jul-2012
摘要: High-performance low-temperature polycrystalline silicon (Poly-Si) thin-film transistors (TFTs) have been fabricated with two-dimensional (2-D) location-controlled grain boundaries using excimer laser crystallization (ELC). By locally increased thickness of the amorphous silicon (a-Si) film that was served as the seed crystals with a partial-melting crystallization scheme, the cross-shaped grain boundary structures were produced between the thicker a-Si grids. The Poly-Si TFTs with one parallel and one perpendicular grain boundary along the channel direction could therefore be fabricated to reach excellent field-effect mobility of 530 cm(2)/V-s while the conventional ones exhibited field-effect mobility of 198 cm(2)/V-s. Furthermore, the proposed TFTs achieved not only superior electric properties but also improved uniformity as compared with the conventional ones owing to the artificially controlled locations of grain boundaries.
URI: http://dx.doi.org/10.1166/jnn.2012.6308
http://hdl.handle.net/11536/16949
ISSN: 1533-4880
DOI: 10.1166/jnn.2012.6308
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 12
Issue: 7
起始頁: 5505
結束頁: 5509
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