標題: | High-Performance ZnO Thin-Film Transistors with Location-Controlled Crystal Grains Fabricated by Low-Temperature Hydrothermal Method |
作者: | Yang, Po-Yu Wang, Jyh-Liang Tsai, Wei-Chih Chang, Yu-Cheng Wang, Shui-Jinn Lee, I-Che Wang, Chao-Lung Chien, Yun-Shan Cheng, Huang-Chung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Zinc Oxide (ZnO);Hydrothermal Method;Thin-Film Transistor (TFT) |
公開日期: | 1-七月-2012 |
摘要: | In this paper, high-performance bottom-gate (BG) thin-film transistors (TFTs) with zinc oxide (ZnO) artificially location-controlled lateral grain growth have been prepared via low-temperature hydrothermal method. For the proper design of source/drain structure of ZnO/Ti/Pt thin films, the grains can be laterally grown from the under-cut ZnO beneath the Ti/Pt layer. Consequently, the single one vertical grain boundary perpendicular to the current flow will be produced in the channel region as the grown grains from the source/drain both sides are impinged. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 mu m/10 mu m) demonstrated the higher field-effect mobility of 6.09 cm(2)/V.s, lower threshold voltage of 3.67 V, higher on/off current ratio above 10(6), and superior current drivability, reflecting the high-quality ZnO thin films with less grain boundary effect in the channel region. |
URI: | http://dx.doi.org/10.1166/jnn.2012.6309 http://hdl.handle.net/11536/16952 |
ISSN: | 1533-4880 |
DOI: | 10.1166/jnn.2012.6309 |
期刊: | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
Volume: | 12 |
Issue: | 7 |
起始頁: | 5783 |
結束頁: | 5787 |
顯示於類別: | 期刊論文 |