標題: High-Performance ZnO Thin-Film Transistors with Location-Controlled Crystal Grains Fabricated by Low-Temperature Hydrothermal Method
作者: Yang, Po-Yu
Wang, Jyh-Liang
Tsai, Wei-Chih
Chang, Yu-Cheng
Wang, Shui-Jinn
Lee, I-Che
Wang, Chao-Lung
Chien, Yun-Shan
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Zinc Oxide (ZnO);Hydrothermal Method;Thin-Film Transistor (TFT)
公開日期: 1-七月-2012
摘要: In this paper, high-performance bottom-gate (BG) thin-film transistors (TFTs) with zinc oxide (ZnO) artificially location-controlled lateral grain growth have been prepared via low-temperature hydrothermal method. For the proper design of source/drain structure of ZnO/Ti/Pt thin films, the grains can be laterally grown from the under-cut ZnO beneath the Ti/Pt layer. Consequently, the single one vertical grain boundary perpendicular to the current flow will be produced in the channel region as the grown grains from the source/drain both sides are impinged. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 mu m/10 mu m) demonstrated the higher field-effect mobility of 6.09 cm(2)/V.s, lower threshold voltage of 3.67 V, higher on/off current ratio above 10(6), and superior current drivability, reflecting the high-quality ZnO thin films with less grain boundary effect in the channel region.
URI: http://dx.doi.org/10.1166/jnn.2012.6309
http://hdl.handle.net/11536/16952
ISSN: 1533-4880
DOI: 10.1166/jnn.2012.6309
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 12
Issue: 7
起始頁: 5783
結束頁: 5787
顯示於類別:期刊論文