標題: High Performance Metal/Insulator/Metal Capacitors Using HfTiO as Dielectric
作者: Hsu, Hsiao-Hsuan
Cheng, Chun-Hu
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10(-8) A/cm(2) at -IV and high capacitance density of 17.5fF/mu m(2) were obtained. A N(2)-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/mu m(2), leakage current of 1.3x10(-9)A/cm(2), and parabolic VCC value of 40ppm/V(2) can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.
URI: http://hdl.handle.net/11536/16965
ISBN: 978-1-4244-2784-0
期刊: PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS
起始頁: 67
結束頁: 68
顯示於類別:會議論文