標題: Output Power Enhancement of Light Emitting Diodes with Defect Passivation layer
作者: Lo, Ming-Hua
Tu, Po-Min
Cheng, Yuh-Jen
Wang, Chao-Hsun
Hung, Cheng-Wei
Hsu, Shih-Chieh
Kuo, Hao-Chung
Zan, Hsiao-Wen
Wang, Shing-Chung
Chang, Chun-Yen
Liu, Che-Ming
光電工程學系
Department of Photonics
關鍵字: GaN;defect passivation
公開日期: 2010
摘要: We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO(2) deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to similar to 4x10(7) cm(-2). The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
URI: http://hdl.handle.net/11536/16976
ISBN: 978-0-8194-7998-3
ISSN: 0277-786X
期刊: GALLIUM NITRIDE MATERIALS AND DEVICES V
Volume: 7602
顯示於類別:會議論文