標題: Low-temperature study of lasing characteristics for 1.3-mu m AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laser
作者: Su, K. W.
Chen, Yi-Fan
Huang, S. C.
Li, A.
Liu, S. C.
Chen, Y. F.
Huang, K. F.
電子物理學系
Department of Electrophysics
關鍵字: VECSEL;AlGaInAs;quantum well
公開日期: 2010
摘要: We report a low-temperature 1.3 mu m AlGaInAs quantum-well laser pumped by a 1.06 mu m active Q-switched laser quenched by a low-temperature vacuum system. An average power of 330mW is achieved at temperature as low as 233K compared to the average power of 50mW obtained at room-temperature without cooling device both at pumping repetition rate of 30 kHz. And the average rate of gain peak shift was found to be 0.47 nm/K between 293-133 K.
URI: http://hdl.handle.net/11536/17084
http://dx.doi.org/10.1117/12.841897
ISBN: 978-0-8194-7974-7
ISSN: 0277-786X
DOI: 10.1117/12.841897
期刊: SOLID STATE LASERS XIX: TECHNOLOGY AND DEVICES
Volume: 7578
Appears in Collections:Conferences Paper


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