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dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorYen, Cheng-Chengen_US
dc.contributor.authorShih, Pi-Chiaen_US
dc.date.accessioned2014-12-08T15:24:43Z-
dc.date.available2014-12-08T15:24:43Z-
dc.date.issued2006en_US
dc.identifier.isbn1-4244-0075-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/17158-
dc.identifier.urihttp://dx.doi.org/10.1109/CICC.2006.320949en_US
dc.description.abstractA new on-chip transient detection circuit for system-level electrostatic discharge (ESD) protection is proposed in this paper. The circuit performance to detect different positive and negative fast electrical transients has been investigated by HSPICE simulator and verified in silicon chip. The experimental results in a 0.13-mu m CMOS process have confirmed that the proposed on-chip transient detection circuit can detect fast electrical transients during system-level ESD zapping. The proposed transient detection circuit can be further cooperated with power-on reset circuit to improve the immunity of CMOS IC products against system-level ESD stress.en_US
dc.language.isoen_USen_US
dc.titleOn-chip transient detection circuit for system-level ESD protection in CMOS ICsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/CICC.2006.320949en_US
dc.identifier.journalPROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCEen_US
dc.citation.spage361en_US
dc.citation.epage364en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000243380700082-
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