完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.contributor.author | Yen, Cheng-Cheng | en_US |
dc.contributor.author | Shih, Pi-Chia | en_US |
dc.date.accessioned | 2014-12-08T15:24:43Z | - |
dc.date.available | 2014-12-08T15:24:43Z | - |
dc.date.issued | 2006 | en_US |
dc.identifier.isbn | 1-4244-0075-9 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/17158 | - |
dc.identifier.uri | http://dx.doi.org/10.1109/CICC.2006.320949 | en_US |
dc.description.abstract | A new on-chip transient detection circuit for system-level electrostatic discharge (ESD) protection is proposed in this paper. The circuit performance to detect different positive and negative fast electrical transients has been investigated by HSPICE simulator and verified in silicon chip. The experimental results in a 0.13-mu m CMOS process have confirmed that the proposed on-chip transient detection circuit can detect fast electrical transients during system-level ESD zapping. The proposed transient detection circuit can be further cooperated with power-on reset circuit to improve the immunity of CMOS IC products against system-level ESD stress. | en_US |
dc.language.iso | en_US | en_US |
dc.title | On-chip transient detection circuit for system-level ESD protection in CMOS ICs | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1109/CICC.2006.320949 | en_US |
dc.identifier.journal | PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE | en_US |
dc.citation.spage | 361 | en_US |
dc.citation.epage | 364 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000243380700082 | - |
顯示於類別: | 會議論文 |