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dc.contributor.authorLiao, Yu-Shengen_US
dc.contributor.authorLin, Gong-Ruen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorFeng, Miltonen_US
dc.date.accessioned2014-12-08T15:24:43Z-
dc.date.available2014-12-08T15:24:43Z-
dc.date.issued2006en_US
dc.identifier.isbn0-8194-6161-Xen_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17167-
dc.identifier.urihttp://dx.doi.org/10.1117/12.645859en_US
dc.description.abstractA novel top-illuminated In0.53Ga0.47As p-i-n photodiodes, with the partially p-doped photoabsorption layer, grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4.10(-15) W/Hz(1/2), and 8 GHz, respectively, at 1550 nm. Under the illumination of 1.2-ps pulse-train, the measured impulse response is 41 ps and the frequency bandwidth is up to 8 GHz with heterodyne beating measurement. The low cost InGaAs photodiode with high current bandwidth product (350 mA center dot GHz, at 10 GHz) and bandwidth-efficient product (4.8 GHz center dot A/W) have been achieved.en_US
dc.language.isoen_USen_US
dc.subjectmetamorphicen_US
dc.subjectIn0.53Ga0.47Asen_US
dc.subjectInGaPen_US
dc.subjectGaAsen_US
dc.subjectp-i-n photodiodeen_US
dc.subjectreceiveren_US
dc.subjecthigh-power photodiodeen_US
dc.titleUndoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate - art. no. 61190Len_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.645859en_US
dc.identifier.journalSemiconductor Photodetectors IIIen_US
dc.citation.volume6119en_US
dc.citation.spageL1190en_US
dc.citation.epageL1190en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000237270800017-
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