Low-power wordline voltage generator for low-voltage flash memory

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, Tzu-Ming	en_US
dc.contributor.author	Ker, Ming-Dou	en_US
dc.contributor.author	Yeh, Steve	en_US
dc.contributor.author	Chang, Ya-Chun	en_US
dc.date.accessioned	2014-12-08T15:24:44Z	-
dc.date.available	2014-12-08T15:24:44Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	978-1-4244-0394-3	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17182	-
dc.identifier.uri	http://dx.doi.org/10.1109/ICECS.2006.379765	en_US
dc.description.abstract	Wordline voltage generating circuit with high speed active mode and low power standby mode is proposed. In the active mode, two different ring oscillators with high clock frequency (f(CLK)) 170MHz, and low clock frequency (f(CLK)) 25MHz which is also the operating frequency of the entire circuit, are employed. The proposed circuit has a short response time of 3 mu s typically in active mode, and very low standby current about 3 mu A in standby mode.	en_US
dc.language.iso	en_US	en_US
dc.title	Low-power wordline voltage generator for low-voltage flash memory	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/ICECS.2006.379765	en_US
dc.identifier.journal	2006 13TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3	en_US
dc.citation.spage	220	en_US
dc.citation.epage	223	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000252489600055	-
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