A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH

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DC Field	Value	Language
dc.contributor.author	CHENG, JY	en_US
dc.contributor.author	LEI, TF	en_US
dc.contributor.author	CHAO, TS	en_US
dc.date.accessioned	2014-12-08T15:03:10Z	-
dc.date.available	2014-12-08T15:03:10Z	-
dc.date.issued	1995-10-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.2050039	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1727	-
dc.description.abstract	The planarization of trench isolation refilled by deposition oi polysilicon was investigated. Results show that the planarization by RIE etching has poor surface planarity. On the other hand, an excellent surface planarity can be achieved by the CMP process resulting from the high etching selectivity of polysilicon to nitride. This simple process provides a very promising candidate for trench isolation.	en_US
dc.language.iso	en_US	en_US
dc.title	A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH	en_US
dc.type	Letter	en_US
dc.identifier.doi	10.1149/1.2050039	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	142	en_US
dc.citation.issue	10	en_US
dc.citation.spage	L187	en_US
dc.citation.epage	L188	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
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