統計資料
總造訪次數
| 檢視 | |
|---|---|
| Twin-GD: A new twin gated-diode measurement for the interface characterization of ultra-thin gate oxide MOSFET's with EOT down to 1nm | 108 |
本月總瀏覽
檔案下載
| 檢視 |
|---|
國家瀏覽排行
| 檢視 | |
|---|---|
| 中國 | 89 |
| 美國 | 17 |
| 台灣 | 2 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 89 |
| Kensington | 9 |
| Menlo Park | 8 |
| 檢視 | |
|---|---|
| Twin-GD: A new twin gated-diode measurement for the interface characterization of ultra-thin gate oxide MOSFET's with EOT down to 1nm | 108 |
| 檢視 |
|---|
| 檢視 | |
|---|---|
| 中國 | 89 |
| 美國 | 17 |
| 台灣 | 2 |
| 檢視 | |
|---|---|
| Shenzhen | 89 |
| Kensington | 9 |
| Menlo Park | 8 |