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dc.contributor.authorHong, Chi-Changen_US
dc.contributor.authorAhn, Hyeyoungen_US
dc.contributor.authorWu, Chen-Yingen_US
dc.contributor.authorGwo, Shangjren_US
dc.date.accessioned2014-12-08T15:25:03Z-
dc.date.available2014-12-08T15:25:03Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-5184-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/17417-
dc.description.abstractWe report more than one order of magnitude stronger green photoluminescence from InGaN/GaN nanorods arrays compare to that from InGaN epilayer and its emission mechanism studied by time-resolved and temperature-resolved photoluminescene measurement. (C)2009 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleStrong Photolumineseence from InGaN/GaN Nanorods Arrays Studies by Time-Resolved Photolumineseenceen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5en_US
dc.citation.spage1365en_US
dc.citation.epage1366en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000274751301006-
Appears in Collections:Conferences Paper


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