Strong Photolumineseence from InGaN/GaN Nanorods Arrays Studies by Time-Resolved Photolumineseence

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hong, Chi-Chang	en_US
dc.contributor.author	Ahn, Hyeyoung	en_US
dc.contributor.author	Wu, Chen-Ying	en_US
dc.contributor.author	Gwo, Shangjr	en_US
dc.date.accessioned	2014-12-08T15:25:03Z	-
dc.date.available	2014-12-08T15:25:03Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-4244-5184-5	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17417	-
dc.description.abstract	We report more than one order of magnitude stronger green photoluminescence from InGaN/GaN nanorods arrays compare to that from InGaN epilayer and its emission mechanism studied by time-resolved and temperature-resolved photoluminescene measurement. (C)2009 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Strong Photolumineseence from InGaN/GaN Nanorods Arrays Studies by Time-Resolved Photolumineseence	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5	en_US
dc.citation.spage	1365	en_US
dc.citation.epage	1366	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000274751301006	-
顯示於類別：	會議論文