Full metadata record
DC FieldValueLanguage
dc.contributor.authorLIU, CWen_US
dc.contributor.authorDAI, BTen_US
dc.contributor.authorYEH, CFen_US
dc.date.accessioned2014-12-08T15:03:11Z-
dc.date.available2014-12-08T15:03:11Z-
dc.date.issued1995-09-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/1747-
dc.description.abstractTo better understand variations in the rate at which material is removed from a wafer during chemical-mechanical polishing (CMP), knowledge of the mechanical properties of the wafer surface is required. The nanoscale mechanical. properties of undoped dielectric films were investigated using the nanoindentation technique. Crack resistance examined from the loading curve suggested that precursor cracks for SiH4-atmospheric pressure chemical deposition films with a tensile stress, as compared with other dielectric films with compressive stresses, appeared in the earlier stage of indentation. The hardness of dielectric films determined from the unloading curve could be considerably dependent on the film's preparation methods. Correlation between the Si-O bond densities and hardness were also studied. Experimental results showed that there was a Linear relationship between the surface hardness and the removal rates of the undoped dielectric films under a well-controlled CMP process.en_US
dc.language.isoen_USen_US
dc.titleCHARACTERIZATION OF THE CHEMICAL-MECHANICAL POLISHING PROCESS-BASED ON NANOINDENTATION MEASUREMENT OF DIELECTRIC FILMSen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume142en_US
dc.citation.issue9en_US
dc.citation.spage3098en_US
dc.citation.epage3104en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1995RV17900051-
dc.citation.woscount14-
Appears in Collections:Articles


Files in This Item:

  1. A1995RV17900051.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.